2002. 7. 9 1/4 semiconductor technical data kra310v~kra314v epitaxial planar pnp transistor revision no : 1 switching application. interface circuit and driver circuit application. features with built-in bias resistors. simplify circuit design. reduce a quantity of parts and manufacturing process. high packing density. dim millimeters a b d e vsm 1.2 0.05 0.8 0.05 0.5 0.05 0.3 0.05 1.2 0.05 0.8 0.05 0.40 0.12 0.05 c g h j k 0.2 0.05 b e d g a h k c j 2 3 1 p p p 5 1. common (emitter) 2. in (base) 3. out (collector) + _ + _ + _ + _ + _ + _ + _ + _ equivalent circuit maximum rating (ta=25 ) mark spec r1 c e b type name marking characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -100 ma characteristic symbol rating unit collector power dissipation p c 100 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 na dc current gain h fe v ce =-5v, i c =-1ma 120 - - collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-0.5ma - -0.1 -0.3 v transition frequency f t * v ce =-10v, i c =-5ma - 250 - mhz input resistor kra310v r 1 - 4.7 - k KRA311V - 10 - kra312v - 100 - kra313v - 22 - kra314v - 47 - type kra310v KRA311V kra312v kra313v kra314v mark pk pm pn po pp electrical characteristics (ta=25 ) note : * characteristic of transistor only.
2002. 7. 9 2/4 kra310v~kra314v revision no : 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit switching time rise time kra310v t r v o =-5v v in =-5v r l =1k - 0.2 - s KRA311V - 0.065 - kra312v - 0.4 - kra313v - 0.1 - kra314v - 0.15 - storage time kra310v t stg - 2.0 - KRA311V - 1.7 - kra312v - 3.0 - kra313v - 2.0 - kra314v - 1.5 - fall time kra310v t f - 0.3 - KRA311V - 0.3 - kra312v - 1.7 - kra313v - 0.8 - kra314v - 1.5 -
2002. 7. 9 3/4 kra310v~kra314v revision no : 1 collector current i (ma) dc current gain h -0.1 fe 300 -0.3 -1 -3 2k h - i fe c c collector current i (ma) dc current gain h fe h - i fe c c collector current i (ma) dc current gain h fe h - i fe c c -10 -30 -100 10 30 50 100 500 1k ta=100 c ta=25 c ta=-25 c v =-5v ce -0.3 -0.1 100 30 50 10 300 500 1k 2k v =-5v -10 -3 -1 ta=100 c ta=25 c ta=-25 c ce -100 -30 -0.3 10 -0.1 50 30 100 -10 v =-5v ta=-25 c -1 ce -3 -100 -30 1k 500 300 2k ta=25 c ta=100 c kra310v KRA311V kra312v kra310v -0.3 collector current i (ma) -0.1 collector-emitter saturatin ce(sat) -0.1 -0.05 -0.03 -0.01 -1 -0.5 -0.3 -2 i /i =20 -10 -3 -1 ta=-25 c ta=25 c ta=100 c c -100 -30 c v - i ce(sat) c voltage v (v) collector current i (ma) collector-emitter saturatin ce(sat) c v - i ce(sat) c voltage v (v) collector current i (ma) collector-emitter saturatin ce(sat) c v - i ce(sat) c voltage v (v) i /i =20 ta=-25 c ta=100 c -0.3 -0.1 -0.3 -0.5 -0.01 -0.03 -0.05 -0.1 -1 c -1 -3 -10 ta=25 c KRA311V -2 -30 -100 b b ta=100 c -0.3 ta=-25 c -0.1 -0.05 -0.03 -0.01 -0.1 -1 ta=25 c -3 -10 -100 -30 i /i =20 kra312v -0.5 -0.3 -1 -2 b c
2002. 7. 9 4/4 kra310v~kra314v revision no : 1 dc current gain h collector current i (ma) -0.3 10 -0.1 50 30 100 -10 v =-5v ta=-25 c -1 ce -3 -100 -30 c fe 1k 500 300 2k ta=25 c ta=100 c h - i c fe dc current gain h collector current i (ma) c fe h - i c fe kra313v ce(sat) voltage v (v) collector-emitter saturatin collector current i (ma) ta=100 c -0.3 ta=-25 c -0.1 -0.05 -0.03 -0.01 -0.1 -1 ta=25 c -3 -10 -100 -30 c i /i =20 kra313v -0.5 -0.3 -1 -2 b c v - i ce(sat) c ce(sat) voltage v (v) collector-emitter saturatin collector current i (ma) c v - i ce(sat) c -0.3 10 -0.1 50 30 100 -10 v =-5v ta=-25 c -1 ce -3 -100 -30 1k 500 300 2k ta=25 c ta=100 c kra314v ta=100 c -0.3 ta=-25 c -0.1 -0.05 -0.03 -0.01 -0.1 -1 ta=25 c -3 -10 -100 -30 i /i =20 kra314v -0.5 -0.3 -1 -2 b c
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